IXYS Type N-Channel MOSFET, 69 A, 300 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 168-4472
- Mfr. Part No.:
- IXFH69N30P
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
HK$2,168.79
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 26 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | HK$72.293 | HK$2,168.79 |
| 60 - 90 | HK$70.723 | HK$2,121.69 |
| 120 + | HK$68.60 | HK$2,058.00 |
*price indicative
- RS Stock No.:
- 168-4472
- Mfr. Part No.:
- IXFH69N30P
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 156nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Standards/Approvals | No | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 156nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Height 21.46mm | ||
Standards/Approvals No | ||
Width 5.3 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247 IXFH69N30P
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247 IXFH94N30P3
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247 IXFH88N30P
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STW77N65M5