IXYS HiperFET, Polar N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

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Subtotal (1 tube of 30 units)*

HK$1,389.21

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  • 1,050 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 30HK$46.307HK$1,389.21
60 - 90HK$45.297HK$1,358.91
120 +HK$43.937HK$1,318.11

*price indicative

RS Stock No.:
168-4469
Mfr. Part No.:
IXFH110N10P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

5.3mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

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For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



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