onsemi PowerTrench N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-220 FDPF3860T
- RS Stock No.:
- 166-2978
- Mfr. Part No.:
- FDPF3860T
- Manufacturer:
- onsemi
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- RS Stock No.:
- 166-2978
- Mfr. Part No.:
- FDPF3860T
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | PowerTrench | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33.8W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.07mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33.8W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Height 16.07mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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