Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 860 mA, 20 V Enhancement, 6-Pin SC-88
- RS Stock No.:
- 166-0612
- Mfr. Part No.:
- PMGD290XN,115
- Manufacturer:
- Nexperia
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Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$2,715.00
FREE delivery for orders over HK$250.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.905 | HK$2,715.00 |
| 6000 - 9000 | HK$0.887 | HK$2,661.00 |
| 12000 + | HK$0.87 | HK$2,610.00 |
*price indicative
- RS Stock No.:
- 166-0612
- Mfr. Part No.:
- PMGD290XN,115
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 860mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.72nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 410mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 860mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.72nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 410mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, Nexperia
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Related links
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