DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 165-8397
- Mfr. Part No.:
- DMN10H099SK3-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$6,522.50
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 21 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$2.609 | HK$6,522.50 |
| 5000 - 7500 | HK$2.557 | HK$6,392.50 |
| 10000 + | HK$2.506 | HK$6,265.00 |
*price indicative
- RS Stock No.:
- 165-8397
- Mfr. Part No.:
- DMN10H099SK3-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | DMN10H099SK3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.77V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.7 mm | |
| Height | 2.39mm | |
| Length | 6.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series DMN10H099SK3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.77V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.7 mm | ||
Height 2.39mm | ||
Length 6.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex DMN10H099SK3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRLR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRLR3410TRPBF
- DiodesZetex DMP Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- DiodesZetex Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement, 3-Pin TO-252