N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IPB083N10N3GATMA1

RS Stock No.:: 165-8268
Mfr. Part No.:: IPB083N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IPB083N10N3GATMA1

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Price Each (On a Reel of 1000)

HK$6.769

416 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Reel**
1000 - 4000	HK$6.769	HK$6,769.00
5000 +	HK$6.634	HK$6,634.00

**price indicative

RS Stock No.:: 165-8268
Mfr. Part No.:: IPB083N10N3GATMA1
Manufacturer:: Infineon

IPP086N10N3 G, IPI086N10N3 G, IPB083N10N3 G, IPD082N10N3 G, OptiMOS3 Power MOSFET Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	15.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.31mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Width	9.45mm
Typical Gate Charge @ Vgs	42 nC @ 10 V
Height	4.57mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IPB083N10N3GATMA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over