STMicroelectronics STripFET F3 Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 165-7785
- Mfr. Part No.:
- STB140NF75T4
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 1000 units)*
HK$12,985.00
Add 1000 units to get free delivery
Temporarily out of stock
- Shipping from 16 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$12.985 | HK$12,985.00 |
| 2000 + | HK$12.595 | HK$12,595.00 |
*price indicative
- RS Stock No.:
- 165-7785
- Mfr. Part No.:
- STB140NF75T4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | STripFET F3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series STripFET F3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 STB140NF75T4
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 STD65N55F3
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerFLAT STL8N10LF3
- STMicroelectronics STripFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 STB160N75F3
- STMicroelectronics STripFET II Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220