P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 Infineon BSP322PH6327XTSA1

RS Stock No.:: 165-5812
Mfr. Part No.:: BSP322PH6327XTSA1
Manufacturer:: Infineon

P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 Infineon BSP322PH6327XTSA1

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Price Each (On a Reel of 1000)**

HK$2.679

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Units	Per unit	Per Reel**
1000 - 4000	HK$2.679	HK$2,679.00
5000 +	HK$2.411	HK$2,411.00

**price indicative

RS Stock No.:: 165-5812
Mfr. Part No.:: BSP322PH6327XTSA1
Manufacturer:: Infineon

BSP322P SIPMOS Small Signal Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1 A
Maximum Drain Source Voltage	100 V
Series	SIPMOS®
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	800 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Length	6.5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	12.4 nC @ 10 V
Width	3.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm

P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 Infineon BSP322PH6327XTSA1

FREE delivery for orders over HK$850.00

Infineon SIPMOS® P-Channel MOSFETs