onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363
- RS Stock No.:
- 163-1117
- Mfr. Part No.:
- NTJD4152PT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$3,105.00
FREE delivery for orders over HK$250.00
Supply shortage
- Plus 21,000 left, shipping from 25 May 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$1.035 | HK$3,105.00 |
| 6000 - 9000 | HK$1.014 | HK$3,042.00 |
| 12000 + | HK$0.994 | HK$2,982.00 |
*price indicative
- RS Stock No.:
- 163-1117
- Mfr. Part No.:
- NTJD4152PT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Power Dissipation Pd | 350mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Power Dissipation Pd 350mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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