Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 50 units)*

HK$1,975.80

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Units
Per unit
Per Reel*
50 - 50HK$39.516HK$1,975.80
100 - 150HK$38.658HK$1,932.90
200 +HK$37.798HK$1,889.90

*price indicative

RS Stock No.:
162-9739
Mfr. Part No.:
CSD19536KTTT
Manufacturer:
Texas Instruments
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Brand

Texas Instruments

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

272A

Maximum Drain Source Voltage Vds

100V

Series

NexFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

900mV

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Typical Gate Charge Qg @ Vgs

118nC

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Height

4.83mm

Length

10.67mm

Width

9.65mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
PH

N-Channel NexFET™ Power MOSFET, Texas Instruments


MOSFET Transistors, Texas Instruments


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