Nexperia Type N-Channel MOSFET, 270 mA, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 pack of 250 units)*

HK$112.50

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Units
Per unit
Per Pack*
250 - 500HK$0.45HK$112.50
750 - 1250HK$0.439HK$109.75
1500 +HK$0.432HK$108.00

*price indicative

RS Stock No.:
151-2761
Mfr. Part No.:
NX7002BKR
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

270mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.67W

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1mm

Length

3mm

Automotive Standard

No

COO (Country of Origin):
CN
Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

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