onsemi NVMFS5C604NL Type N-Channel MOSFET, 287 A, 60 V Enhancement, 4-Pin DFN
- RS Stock No.:
- 141-2084
- Mfr. Part No.:
- NVMFS5C604NLAFT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 1500 units)*
HK$39,462.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | HK$26.308 | HK$39,462.00 |
| 3000 - 4500 | HK$25.782 | HK$38,673.00 |
| 6000 + | HK$25.266 | HK$37,899.00 |
*price indicative
- RS Stock No.:
- 141-2084
- Mfr. Part No.:
- NVMFS5C604NLAFT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 287A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5C604NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 287A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5C604NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 5.1mm | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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