ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316
- RS Stock No.:
- 133-2856
- Mfr. Part No.:
- RYC002N05T316
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 100 units)*
HK$100.50
FREE delivery for orders over HK$250.00
Last RS stock
- 300 left, ready to ship from another location
- Final 1,300 unit(s) shipping from 28 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | HK$1.005 | HK$100.50 |
| 500 - 900 | HK$0.98 | HK$98.00 |
| 1000 - 4900 | HK$0.955 | HK$95.50 |
| 5000 - 9900 | HK$0.931 | HK$93.10 |
| 10000 + | HK$0.908 | HK$90.80 |
*price indicative
- RS Stock No.:
- 133-2856
- Mfr. Part No.:
- RYC002N05T316
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | RYC002N05 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Width | 1.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series RYC002N05 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Width 1.5 mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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