Infineon OptiMOS Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

HK$915.00

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Units
Per unit
Per Reel*
3000 - 3000HK$0.305HK$915.00
6000 - 27000HK$0.296HK$888.00
30000 +HK$0.266HK$798.00

*price indicative

RS Stock No.:
124-9035
Mfr. Part No.:
2N7002H6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

0.4nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

1.3 mm

Height

1mm

Length

2.9mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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