Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF
- RS Stock No.:
- 124-9025
- Mfr. Part No.:
- IRLB3036PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 50 units)*
HK$1,222.20
FREE delivery for orders over HK$250.00
- 1,000 unit(s) shipping from 03 December 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$24.444 | HK$1,222.20 |
| 100 - 150 | HK$23.912 | HK$1,195.60 |
| 200 + | HK$23.38 | HK$1,169.00 |
*price indicative
- RS Stock No.:
- 124-9025
- Mfr. Part No.:
- IRLB3036PBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Power Dissipation Pd | 380W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Power Dissipation Pd 380W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 9.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 270A Maximum Continuous Drain Current - IRLB3036PBF
Features and Benefits:
• High continuous drain current 270A to handle heavy loads
• 380W maximum power dissipation for high-power switching
• 60V drain-source voltage rating for moderate-voltage systems
• Typical gate charge 91 nC enabling predictable switching behaviour
Applications
• Ideal for power supplies and DC-DC converters
• Used with high-current switching in battery management
• Can be used for inverter output stages in medium-voltage systems
What gate voltage limits must be observed?
How does thermal range affect deployment?
What is the forward conduction characteristic when the body diode conducts?
What package and mounting considerations apply for heat dissipation?
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3006PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP3006PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFB3006PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
