Infineon HEXFET Type N-Channel MOSFET, 60 A, 250 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 124-8961
- Mfr. Part No.:
- IRFB4332PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$804.30
FREE delivery for orders over HK$250.00
In Stock
- Plus 1,250 unit(s) shipping from 07 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$16.086 | HK$804.30 |
| 100 - 150 | HK$15.736 | HK$786.80 |
| 200 + | HK$15.388 | HK$769.40 |
*price indicative
- RS Stock No.:
- 124-8961
- Mfr. Part No.:
- IRFB4332PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 390W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Length | 10.66mm | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 390W | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Length 10.66mm | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF
This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging Advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.
Features & Benefits
• N-channel configuration supports efficient current flow
• Continuous drain current rating of 60A facilitates strong performance
• High voltage capacity up to 250V enhances versatility
• Low on-resistance increases efficiency and minimises heat generation
• Enhancement mode operation improves stability for digital applications
• High power dissipation capability contributes to reliability under load
Applications
• Applied in energy recovery systems to boost efficiency
• Suitable for pass switch where space is limited
• Utilised in plasma display panels to enhance performance
• Ideal for automation controls demanding sustained high current
What is the temperature range for optimal operation?
The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.
How does the gate threshold voltage affect performance?
With a threshold voltage between 3V and 5V, it permits precise control in switching applications.
Can it handle high pulsed currents?
Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.
What are the thermal management requirements?
To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.
Is it compatible with various mounting configurations?
The TO-220AB package allows for straightforward through-hole mounting, enhancing compatibility across multiple circuit designs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220