ROHM RRR040P03 Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin TSMT RQ5E040RPTL
- RS Stock No.:
- 124-6810
- Mfr. Part No.:
- RQ5E040RPTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$85.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 3,000 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | HK$4.25 | HK$85.00 |
| 100 - 180 | HK$4.145 | HK$82.90 |
| 200 - 480 | HK$4.04 | HK$80.80 |
| 500 - 980 | HK$3.94 | HK$78.80 |
| 1000 + | HK$3.84 | HK$76.80 |
*price indicative
- RS Stock No.:
- 124-6810
- Mfr. Part No.:
- RQ5E040RPTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | RRR040P03 | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 72mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Width | 1.6 mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series RRR040P03 | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 72mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Width 1.6 mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Related links
- ROHM RTR020P02 Type P-Channel MOSFET 20 V Enhancement, 3-Pin TSMT RQ5C020TPTL
- ROHM RQ5C035BC Type P-Channel MOSFET 20 V Enhancement, 3-Pin TSMT-3 RQ5C035BCTCL
- ROHM Single 1 Type P-Channel MOSFET 3-Pin TSMT-3 RTU002P02T106
- ROHM RQ5H020SP Type P-Channel MOSFET 45 V Enhancement, 3-Pin TSMT RQ5H020SPTL
- ROHM RUR040N02 Type N-Channel MOSFET 20 V Enhancement, 3-Pin TSMT RUR040N02TL
- ROHM RRR040P03HZG Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-346 RRR040P03HZGTL
- ROHM RRR040P03HZG Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-346
- ROHM QH8MA3 Type N 7 A 8-Pin TSMT