ROHM RQ5A030AP Type P-Channel MOSFET, 3 A, 12 V Enhancement, 3-Pin SC-96 RQ5A030APTL
- RS Stock No.:
- 124-6804
- Mfr. Part No.:
- RQ5A030APTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$61.70
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 20 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | HK$2.468 | HK$61.70 |
| 125 - 225 | HK$2.408 | HK$60.20 |
| 250 - 600 | HK$2.344 | HK$58.60 |
| 625 - 1225 | HK$2.284 | HK$57.10 |
| 1250 + | HK$2.228 | HK$55.70 |
*price indicative
- RS Stock No.:
- 124-6804
- Mfr. Part No.:
- RQ5A030APTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SC-96 | |
| Series | RQ5A030AP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | -8 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 1.8 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SC-96 | ||
Series RQ5A030AP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs -8 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 1.8 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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