ROHM RE1C002UN Type N-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-416 RE1C002UNTCL
- RS Stock No.:
- 124-6784
- Mfr. Part No.:
- RE1C002UNTCL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 150 units)*
HK$66.75
FREE delivery for orders over HK$250.00
In Stock
- 600 unit(s) ready to ship from another location
- Plus 1,800 unit(s) shipping from 28 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 600 | HK$0.445 | HK$66.75 |
| 750 - 1350 | HK$0.438 | HK$65.70 |
| 1500 - 3600 | HK$0.427 | HK$64.05 |
| 3750 - 7350 | HK$0.415 | HK$62.25 |
| 7500 + | HK$0.405 | HK$60.75 |
*price indicative
- RS Stock No.:
- 124-6784
- Mfr. Part No.:
- RE1C002UNTCL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-416 | |
| Series | RE1C002UN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.96 mm | |
| Height | 0.8mm | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-416 | ||
Series RE1C002UN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.96 mm | ||
Height 0.8mm | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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