ROHM RAF040P01 Type P-Channel MOSFET, 4 A, 12 V Enhancement, 3-Pin SOT-323 RAF040P01TCL
- RS Stock No.:
- 124-6767
- Mfr. Part No.:
- RAF040P01TCL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$77.50
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 11 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | HK$3.875 | HK$77.50 |
| 100 - 180 | HK$3.775 | HK$75.50 |
| 200 - 480 | HK$3.685 | HK$73.70 |
| 500 - 980 | HK$3.595 | HK$71.90 |
| 1000 + | HK$3.50 | HK$70.00 |
*price indicative
- RS Stock No.:
- 124-6767
- Mfr. Part No.:
- RAF040P01TCL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | RAF040P01 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -8 V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 800mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Width | 1.8 mm | |
| Height | 0.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series RAF040P01 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -8 V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 800mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Width 1.8 mm | ||
Height 0.82mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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