ROHM Isolated EM6K6 2 Type N-Channel Small Signal, 300 mA, 20 V Enhancement, 6-Pin SOT-563 EM6K6T2R
- RS Stock No.:
- 124-6573
- Mfr. Part No.:
- EM6K6T2R
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 40 units)*
HK$46.80
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 20 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 40 - 160 | HK$1.17 | HK$46.80 |
| 200 - 360 | HK$1.145 | HK$45.80 |
| 400 - 960 | HK$1.123 | HK$44.92 |
| 1000 - 1960 | HK$1.10 | HK$44.00 |
| 2000 + | HK$1.078 | HK$43.12 |
*price indicative
- RS Stock No.:
- 124-6573
- Mfr. Part No.:
- EM6K6T2R
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | EM6K6 | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 0.45mm | |
| Width | 1.3 mm | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series EM6K6 | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 0.45mm | ||
Width 1.3 mm | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
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