DiodesZetex DMG2302U Type N-Channel MOSFET, 4.2 A, 20 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 122-2873
- Mfr. Part No.:
- DMG2302U-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$2,280.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 3,000 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.76 | HK$2,280.00 |
| 6000 - 9000 | HK$0.737 | HK$2,211.00 |
| 12000 + | HK$0.723 | HK$2,169.00 |
*price indicative
- RS Stock No.:
- 122-2873
- Mfr. Part No.:
- DMG2302U-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG2302U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 800mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG2302U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 800mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex DMG2302U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMG2302U-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMG3414U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMP2305U-7
- DiodesZetex DMG3414U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMG3414U-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMN2075U-7
- International Rectifier IRLML2502 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23