MPN

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC

RS Stock No.:: 122-1450
Mfr. Part No.:: ZXMC3A16DN8TA
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 500 units)*

HK$4,177.50

Add 500 units to get free delivery

Orders below HK$250.00 (exc. GST) cost HK$50.00.

In Stock

500 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
500 - 500	HK$8.355	HK$4,177.50
1000 - 1500	HK$8.188	HK$4,094.00
2000 +	HK$8.024	HK$4,012.00

*price indicative

RS Stock No.:: 122-1450
Mfr. Part No.:: ZXMC3A16DN8TA
Manufacturer:: DiodesZetex

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type P, Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.4A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	17.5nC
	Minimum Operating Temperature	150°C
	Forward Voltage Vf	0.85V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.1W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Width	4 mm
	Height	1.5mm
	Length	5mm
	Standards/Approvals	RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Channel Type Type P, Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.4A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 17.5nC
	Minimum Operating Temperature 150°C
	Forward Voltage Vf 0.85V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.1W
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Width 4 mm
	Height 1.5mm
	Length 5mm
	Standards/Approvals RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC

Add 500 units to get free delivery

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Related links