DiodesZetex ZVN4525G Type N-Channel MOSFET, 310 mA, 250 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 122-1263
- Mfr. Part No.:
- ZVN4525GTA
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 1000 units)*
HK$4,452.00
Add 1000 units to get free delivery
Temporarily out of stock
- Shipping from 02 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$4.452 | HK$4,452.00 |
| 2000 - 3000 | HK$4.363 | HK$4,363.00 |
| 4000 + | HK$4.275 | HK$4,275.00 |
*price indicative
- RS Stock No.:
- 122-1263
- Mfr. Part No.:
- ZVN4525GTA
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | ZVN4525G | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Height | 1.7mm | |
| Length | 6.7mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series ZVN4525G | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Height 1.7mm | ||
Length 6.7mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex ZVN4525G Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 ZVN4525GTA
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 ZVP2110GTA
- DiodesZetex Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- DiodesZetex Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 ZVP4525GTA
- Nexperia BSP126 Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Nexperia BSP126 Type N-Channel MOSFET 250 V Enhancement115
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223