onsemi Type P-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 103-5071
- Mfr. Part No.:
- NTR4101PT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$1,953.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 6,000 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.651 | HK$1,953.00 |
| 6000 - 9000 | HK$0.631 | HK$1,893.00 |
| 12000 + | HK$0.613 | HK$1,839.00 |
*price indicative
- RS Stock No.:
- 103-5071
- Mfr. Part No.:
- NTR4101PT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 730mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 0.94mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 730mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 0.94mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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