STMicroelectronics Single MDmesh 1 N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220FP STF13NM60N
- RS Stock No.:
- 103-1999
- Mfr. Part No.:
- STF13NM60N
- Manufacturer:
- STMicroelectronics
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| 50 - 50 | HK$14.916 | HK$745.80 | - |
| 100 - 150 | HK$14.59 | HK$729.50 | 2% |
| 200 + | HK$14.266 | HK$713.30 | 4% |
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- RS Stock No.:
- 103-1999
- Mfr. Part No.:
- STF13NM60N
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Transistor Configuration | Single | |
| Series | MDmesh | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 11 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220FP | |
| Height | 16.4 mm | |
| Length | 10.4 mm | |
| Maximum Drain Source Resistance (Rds) | 360 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 25 V, -25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 25 W | |
| Mount Type | Through Hole | |
| Width | 4.6 mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Transistor Configuration Single | ||
Series MDmesh | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 11 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220FP | ||
Height 16.4 mm | ||
Length 10.4 mm | ||
Maximum Drain Source Resistance (Rds) 360 mΩ | ||
Maximum Gate Source Voltage (Vgs) 25 V, -25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 25 W | ||
Mount Type Through Hole | ||
Width 4.6 mm | ||
N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a TO-220FP package
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
All features
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