Vishay SiSS N-Channel MOSFET, 50.3 A, 80 V N, 8-Pin 1212-8S SISS32ADN-T1-UE3
- RS Stock No.:
- 878-901
- Mfr. Part No.:
- SISS32ADN-T1-UE3
- Manufacturer:
- Vishay
N
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|---|---|
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| 100 - 499 | HK$6.25 |
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- RS Stock No.:
- 878-901
- Mfr. Part No.:
- SISS32ADN-T1-UE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiSS | |
| Package Type | 1212-8S | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0087Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.83mm | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiSS | ||
Package Type 1212-8S | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0087Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Height 0.83mm | ||
Width 3.4mm | ||
Length 3.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay semiconductor is a robust N-Channel MOSFET designed for efficient power management, featuring low on-state resistance and enhanced thermal performance for demanding operational environments.
TrenchFET Gen IV technology offers superior efficiency
Very low RDS(on) reduces power loss during operation
Gate-source threshold voltage guarantees reliable switching
Extensive temperature range ensures operation in various conditions
Package design allows for simplified integration in circuit layouts
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