DiodesZetex Type N-Channel MOSFET, 450 mA, 100 V Enhancement, 3-Pin TO-92 ZVN4210A
- RS Stock No.:
- 841-283
- Mfr. Part No.:
- ZVN4210A
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$38.90
FREE delivery for orders over HK$250.00
In Stock
- 55 unit(s) ready to ship from another location
- Plus 4,050 unit(s) shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$7.78 | HK$38.90 |
| 25 - 95 | HK$7.58 | HK$37.90 |
| 100 - 245 | HK$7.42 | HK$37.10 |
| 250 - 495 | HK$7.24 | HK$36.20 |
| 500 + | HK$7.02 | HK$35.10 |
*price indicative
- RS Stock No.:
- 841-283
- Mfr. Part No.:
- ZVN4210A
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.95mm | |
| Length | 4.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.95mm | ||
Length 4.95mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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