Vishay SIR N channel-Channel Single MOSFETs, 203 A, 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3
- RS Stock No.:
- 829-344
- Mfr. Part No.:
- SIRS5100EPW-T1-RE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
HK$25.91
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 19 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | HK$25.91 |
| 10 - 24 | HK$16.86 |
| 25 - 99 | HK$9.94 |
| 100 - 499 | HK$9.72 |
| 500 + | HK$9.49 |
*price indicative
- RS Stock No.:
- 829-344
- Mfr. Part No.:
- SIRS5100EPW-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | P | |
| Series | SIR | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0027Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 205W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1.04mm | |
| Width | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type P | ||
Series SIR | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0027Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 205W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1.04mm | ||
Width 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET delivers high performance for applications demanding efficient switching. With its Advanced design, it enables significant reductions in power loss and enhanced overall thermal management.
Provides a drain-source voltage rating of 100 V, ensuring reliable operation
Achieves a low on-state resistance, which minimises power loss during conduction
Offers a continuous drain current of up to 203 A, suitable for high-power demands
Features a Pb-free and halogen-free construction for compliance with environmental regulations
Related links
- Vishay SIR N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR680ADP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SQJ N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ160ELP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
