ROHM N-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1
- RS Stock No.:
- 780-669
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
HK$62.87
FREE delivery for orders over HK$250.00
In Stock
- 610 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | HK$31.435 | HK$62.87 |
| 20 - 98 | HK$27.695 | HK$55.39 |
| 100 + | HK$22.335 | HK$44.67 |
*price indicative
- RS Stock No.:
- 780-669
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 0V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 15.5mm | |
| Width | 10.2mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 0V | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 15.5mm | ||
Width 10.2mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W
Related links
- ROHM N channel-Channel MOSFET 60 V, 7-Pin DFN2020Y7LSAA RF9L120BLFRATCR
- ROHM N channel-Channel MOSFET 40 V, 7-Pin DFN2020Y7LSAA RF9G120BLFRATCR
- ROHM N channel-Channel MOSFET 100 V, 7-Pin DFN2020Y7LSAA RF9P120BLFRATCR
- Semikron Danfoss SKM400GB176D 430 A 1700 V Panel
- ROHM N-Channel MOSFET 750 V Enhancement, 7-Pin TO-263
- ROHM N-Channel MOSFET 750 V Enhancement, 7-Pin TO-263
- Infineon IMBF1 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263
- Wolfspeed Series Type N-Channel Power MOSFET 1700 V Enhancement, 7-Pin