ROHM N-Channel MOSFET, 40 A, 40 V, 8-Pin DFN3333T8LSAB RH7L04CBKFRATCB
- RS Stock No.:
- 780-664
- Mfr. Part No.:
- RH7L04CBKFRATCB
- Manufacturer:
- ROHM
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View bulk pricing optionsSubtotal (1 tape of 10 units)*
HK$81.07
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | HK$8.107 | HK$81.07 |
| 100 - 490 | HK$7.136 | HK$71.36 |
| 500 + | HK$5.762 | HK$57.62 |
*price indicative
- RS Stock No.:
- 780-664
- Mfr. Part No.:
- RH7L04CBKFRATCB
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN3333T8LSAB | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16Ω | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN3333T8LSAB | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16Ω | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.4mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET delivers high-performance N-channel switching for automotive power management. This robust device is engineered for ADAS and body electronics,
Drain to source voltage of 60 V
Continuous drain current of 40 A
10.6 mOhm typical on-resistance at 10 V
High power dissipation of 62 W
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