STMicroelectronics STWA60N0 N-Channel Power MOSFET, 62 A, 600 V N, 3-Pin TO-247 STWA60N035M9
- RS Stock No.:
- 762-554
- Mfr. Part No.:
- STWA60N035M9
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
HK$69.80
FREE delivery for orders over HK$250.00
In Stock
- Plus 145 unit(s) shipping from 19 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | HK$69.80 |
| 10 - 49 | HK$67.80 |
| 50 - 99 | HK$65.70 |
| 100 + | HK$56.60 |
*price indicative
- RS Stock No.:
- 762-554
- Mfr. Part No.:
- STWA60N035M9
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STWA60N0 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 321W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 15.9mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STWA60N0 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 321W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 15.9mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
Related links
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 4-Pin TO-247
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 4-Pin TO-247 STW70N60DM6-4
- STMicroelectronics STHU65N1 N channel-Channel Power MOSFET 650 V N, 7-Pin HU3PAK STHU65N110DM9AG
- STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N050DM9
- STMicroelectronics Enhancement Mode STL N channel-Channel Power MOSFET 80 V N, 8-Pin PowerFLAT STL110N8F8
- STMicroelectronics Enhancement Mode STL N channel-Channel Power MOSFET 80 V N, 8-Pin PowerFLAT STL180N8F8
- STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- STMicroelectronics Sct N channel-Channel Power MOSFET 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
