ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL
- RS Stock No.:
- 687-355
- Mfr. Part No.:
- RD3P08BBLHRBTL
- Manufacturer:
- ROHM
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HK$40.60
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In Stock
- Plus 96 unit(s) shipping from 03 September 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | HK$20.30 | HK$40.60 |
| 20 - 98 | HK$17.90 | HK$35.80 |
| 100 - 198 | HK$16.05 | HK$32.10 |
| 200 + | HK$12.60 | HK$25.20 |
*price indicative
- RS Stock No.:
- 687-355
- Mfr. Part No.:
- RD3P08BBLHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P08BBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P08BBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 10.5mm | ||
Width 6.8mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for robust applications requiring efficient switching. With a maximum voltage rating of 100V and a continuous drain current of 80A, this component delivers reliable power management. Its low on-resistance of just 6.2mΩ ensures minimal energy loss during operation, which is critical for enhancing the efficiency of power supplies. Supporting a wide range of commutated current applications, this MOSFET is AEC-Q101 qualified, making it suitable for automotive environments. Its compact DPAK package allows for improved thermal performance in confined spaces.
Low on resistance enhances energy efficiency, reducing heat generation
100V drain-source voltage rating supports diverse high-voltage applications
Continuous drain current of 80A allows for dependable performance under heavy loads
AEC Q101 qualified, assuring high reliability for automotive applications
Compact TO-252 package facilitates better thermal management and space-saving designs
Robust avalanche capability ensures safety during transient conditions
High power dissipation of 142W accommodates demanding operational needs
Pb free plating and RoHS compliant, aligning with environmentally friendly practices
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