Microchip DN3525 N-Channel Single MOSFETs, 360 mA, 250 V Depletion, 3-Pin SOT-89 DN3525N8-G
- RS Stock No.:
- 649-455
- Mfr. Part No.:
- DN3525N8-G
- Manufacturer:
- Microchip
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 50 more to save HK$39.00
View bulk pricing optionsSubtotal (1 tape of 5 units)*
HK$33.20
FREE delivery for orders over HK$250.00
In Stock
- 95 unit(s) ready to ship from another location
- Plus 2,000 unit(s) shipping from 25 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* | Saving |
|---|---|---|---|
| 5 - 45 | HK$6.64 | HK$33.20 | - |
| 50 - 245 | HK$5.86 | HK$29.30 | HK$39.00 |
| 250 - 495 | HK$5.74 | HK$28.70 | HK$225.00 |
| 500 + | HK$5.56 | HK$27.80 | HK$540.00 |
*price indicative
- RS Stock No.:
- 649-455
- Mfr. Part No.:
- DN3525N8-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-89 | |
| Series | DN3525 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-89 | ||
Series DN3525 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Related links
- Microchip DN3135 Type N-Channel Single MOSFETs 350 V Depletion, 3-Pin SOT-89 DN3135N8-G
- Infineon BSS139I Type N-Channel MOSFET 250 V Depletion, 3-Pin SOT-23 BSS139IXTSA1
- Infineon BSS139I Type N-Channel MOSFET 250 V Depletion, 3-Pin SOT-23
- Microchip VN2460 Type N-Channel Single MOSFETs 600 V Enhancement, 3-Pin SOT-89 VN2460N8-G
- Microchip DN2535 N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3)
- DiodesZetex ZVN4525Z Type N-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89
- DiodesZetex ZVN4525Z Type N-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89 ZVN4525ZTA
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1