Nexperia BSH108 Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23 BSH108,215
- RS Stock No.:
- 509-324
- Mfr. Part No.:
- BSH108,215
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$38.80
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 40 unit(s) shipping from 05 February 2026
- Plus 1,200 unit(s) shipping from 06 February 2026
- Plus 3,000 unit(s) shipping from 27 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | HK$1.94 | HK$38.80 |
| 760 - 1480 | HK$1.89 | HK$37.80 |
| 1500 + | HK$1.865 | HK$37.30 |
*price indicative
- RS Stock No.:
- 509-324
- Mfr. Part No.:
- BSH108,215
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | BSH108 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 830mW | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series BSH108 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 830mW | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Height 1mm | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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