onsemi NTF3055L108 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223 NTF3055L108T1G
- RS Stock No.:
- 463-307
- Distrelec Article No.:
- 304-37-287
- Mfr. Part No.:
- NTF3055L108T1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$94.20
FREE delivery for orders over HK$250.00
Limited stock
- Plus 5,500 left, shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 240 | HK$4.71 | HK$94.20 |
| 260 - 480 | HK$4.59 | HK$91.80 |
| 500 + | HK$4.52 | HK$90.40 |
*price indicative
- RS Stock No.:
- 463-307
- Distrelec Article No.:
- 304-37-287
- Mfr. Part No.:
- NTF3055L108T1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NTF3055L108 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.57mm | |
| Width | 3.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NTF3055L108 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.57mm | ||
Width 3.5 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
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