Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1
- RS Stock No.:
- 351-971
- Mfr. Part No.:
- IGC033S10S1XTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$67.87
FREE delivery for orders over HK$250.00
In Stock
- Plus 4,956 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | HK$33.935 | HK$67.87 |
| 20 - 198 | HK$30.56 | HK$61.12 |
| 200 - 998 | HK$28.18 | HK$56.36 |
| 1000 - 1998 | HK$26.13 | HK$52.26 |
| 2000 + | HK$23.42 | HK$46.84 |
*price indicative
- RS Stock No.:
- 351-971
- Mfr. Part No.:
- IGC033S10S1XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IGC033 | |
| Package Type | PG-VSON-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 5.5 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.1 mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IGC033 | ||
Package Type PG-VSON-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 5.5 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.1 mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Transistor is a normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Best in class power density
Highest efficiency
Improved thermal management
Enabling smaller and lighter designs
Excellent reliability
Lowering BOM cost
Related links
- Infineon IGC033 Type P-Channel MOSFET 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1
- Infineon CoolGaN Type P-Channel Single MOSFETs 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101
- Infineon CoolGaN Type P-Channel Single MOSFETs 100 V Enhancement, 6-Pin PG-TSON-6-2 IGC033S10S1
- Infineon TLE4972AE35S5XUMA1 PG-VSON-6
- DiodesZetex DMP4011 Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060 DMP4011SPS-13
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSONP CSD25402Q3A
- DiodesZetex DMP4011 Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSONP