Infineon IMLT N-Channel MOSFET, 142 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1

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HK$242.70

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1 - 9HK$242.70
10 - 99HK$218.30
100 +HK$201.40

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RS Stock No.:
349-047
Mfr. Part No.:
IMLT65R015M2HXTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

142A

Maximum Drain Source Voltage Vds

650V

Series

IMLT

Package Type

PG-HDSOP-16

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

23V

Typical Gate Charge Qg @ Vgs

148nC

Maximum Power Dissipation Pd

600W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY

Infineon IMLT Series MOSFET, 650V Drain-Source Voltage, 142A Continuous Drain Current - IMLT65R015M2HXTMA1


This MOSFET is a high-voltage N‑channel enhancement device designed for demanding power‑switching roles. It operates across a wide temperature range and is supplied in a Compact surface‑mount package suitable for dense electronic assemblies. The device delivers substantial power‑handling capability while conforming to RoHS environmental limits.

Features and Benefits:


• 18mΩ on‑resistance reduces conduction losses
• 600W power dissipation supports heavy‑load switching
• 142A continuous drain current enables high‑current applications
• 650V drain‑source rating allows high‑voltage operation
• 23V gate‑source limit provides gate overvoltage protection

Applications


• Suitable for high‑voltage power converters
• Ideal for industrial motor drive stages
• Used for DC‑DC and PFC circuits
• Can be used for renewable‑energy inverters
• Suitable for high‑current switching modules

What package type does it use for PCB assembly?


It is supplied in a PG‑HDSOP‑16 surface‑mount package suitable for automated placement.

What thermal environment can it withstand?


It operates between -55°C and 175°C for broad‑temperature deployments.

How does its gate charge affect switching performance?


The typical gate charge is 148nC, which influences drive requirements and switching losses during transitions.

Is it suitable for automotive qualification?


It is not specified as automotive‑standard compliant but meets RoHS environmental restrictions.

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