Infineon ISA Type P, Type N-Channel MOSFET, 8.4 A, 30 V Enhancement, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1
- RS Stock No.:
- 348-904
- Mfr. Part No.:
- ISA220280C03LMDSXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$83.04
FREE delivery for orders over HK$250.00
In Stock
- 4,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | HK$4.152 | HK$83.04 |
| 200 - 480 | HK$3.948 | HK$78.96 |
| 500 - 980 | HK$3.654 | HK$73.08 |
| 1000 - 1980 | HK$3.366 | HK$67.32 |
| 2000 + | HK$3.239 | HK$64.78 |
*price indicative
- RS Stock No.:
- 348-904
- Mfr. Part No.:
- ISA220280C03LMDSXTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISA | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.2mm | |
| Height | 1.75mm | |
| Width | 5 mm | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISA | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.2mm | ||
Height 1.75mm | ||
Width 5 mm | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
Related links
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Type N 7.9 A 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon SPD04P10PL G Type P-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO252-3 SPD04P10PLGBTMA1
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD18P06P G Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3