Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3

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Subtotal (1 pack of 5 units)*

HK$109.00

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Per Pack*
5 - 45HK$21.80HK$109.00
50 - 95HK$21.14HK$105.70
100 - 245HK$20.50HK$102.50
250 +HK$19.88HK$99.40

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RS Stock No.:
273-2832
Mfr. Part No.:
SPD18P06PGBTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-18.6A

Maximum Drain Source Voltage Vds

60V

Series

SPD18P06P G

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

80W

Forward Voltage Vf

1.33V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Length

40mm

Height

1.5mm

Width

40 mm

Standards/Approvals

IEC 68-1, RoHS, AEC Q101

Automotive Standard

AEC-Q101

The Infineon MOSFET is a P channel, enhancement mode MOSFET. It has 175 degree Celsius operating temperature. This MOSFET is qualified according to AEC Q101 standard.

RoHS compliant

Avalanche rated

Pb free lead plating

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