ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1

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Subtotal (1 tape of 10 units)*

HK$67.70

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Units
Per unit
Per Tape*
10 - 90HK$6.77HK$67.70
100 - 240HK$6.43HK$64.30
250 - 490HK$5.95HK$59.50
500 - 990HK$5.48HK$54.80
1000 +HK$5.28HK$52.80

*price indicative

RS Stock No.:
331-689
Mfr. Part No.:
RQ3N060ATTB1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOP-8

Series

RQ3N060AT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

20W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM Power MOSFET is a low on resistance MOSFET ideal for switching and motor drives applications. This power MOSFET comes in a high power small mould package.

Pb free plating

RoHS compliant

Halogen free

100 percent Rg and UIS tested

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