onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- RS Stock No.:
- 277-040
- Mfr. Part No.:
- NTBG023N065M3S
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
HK$76.62
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In Stock
- 800 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | HK$76.62 |
| 10 - 99 | HK$68.98 |
| 100 - 499 | HK$63.56 |
| 500 - 999 | HK$59.02 |
| 1000 + | HK$47.94 |
*price indicative
- RS Stock No.:
- 277-040
- Mfr. Part No.:
- NTBG023N065M3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 263W | |
| Forward Voltage Vf | 6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.4mm | |
| Length | 9.2mm | |
| Width | 9.9 mm | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 263W | ||
Forward Voltage Vf 6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.4mm | ||
Length 9.2mm | ||
Width 9.9 mm | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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