ROHM RV7 N-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin DFN1212-3 RV7E040AJTCR1
- RS Stock No.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 25 units)*
HK$52.70
FREE delivery for orders over HK$250.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | HK$2.108 | HK$52.70 |
| 100 - 225 | HK$2.004 | HK$50.10 |
| 250 - 475 | HK$1.856 | HK$46.40 |
| 500 - 975 | HK$1.708 | HK$42.70 |
| 1000 + | HK$1.644 | HK$41.10 |
*price indicative
- RS Stock No.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | RV7 | |
| Package Type | DFN1212-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 4.0nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.5mm | |
| Width | 1.2mm | |
| Length | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series RV7 | ||
Package Type DFN1212-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 4.0nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.5mm | ||
Width 1.2mm | ||
Length 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
Related links
- ROHM RV7 Type N-Channel MOSFET 3-Pin DFN1212-3 RV7L020GNTCR1
- ROHM RV7C040BC Type P-Channel MOSFET -20 V Depletion, 4-Pin DFN1212-3 RV7C040BCTCR1
- ROHM R6530KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- ROHM R6530KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6530KNX3C16
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ34PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRLZ34NPBF
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263