ROHM R65 1 Type N-Channel MOSFET, 125 A, 30 V Enhancement, 8-Pin HSMT-8 RH6E040BGTB1
- RS Stock No.:
- 265-310
- Mfr. Part No.:
- RH6E040BGTB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 10 units)*
HK$76.62
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 100 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | HK$7.662 | HK$76.62 |
| 100 - 240 | HK$7.275 | HK$72.75 |
| 250 - 490 | HK$6.743 | HK$67.43 |
| 500 - 990 | HK$6.212 | HK$62.12 |
| 1000 + | HK$5.979 | HK$59.79 |
*price indicative
- RS Stock No.:
- 265-310
- Mfr. Part No.:
- RH6E040BGTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HSMT-8 | |
| Series | R65 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 30.0nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HSMT-8 | ||
Series R65 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 30.0nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
The ROHM Power MOSFET features low on resistance and is housed in a compact, high power small mould package. It is well suited for a variety of applications, including switching, motor drives, and DC/DC converters, delivering efficient performance in space-constrained environments.
Pb free plating
RoHS compliant
High power small mould package
Low on resistance
100 percent Rg and UIS tested
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