ROHM R65 1 Type N-Channel MOSFET, 125 A, 30 V Enhancement, 8-Pin HSMT-8 RH6E040BGTB1

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Subtotal (1 tape of 10 units)*

HK$84.30

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Units
Per unit
Per Tape*
10 - 90HK$8.43HK$84.30
100 - 240HK$8.00HK$80.00
250 - 490HK$7.42HK$74.20
500 - 990HK$6.83HK$68.30
1000 +HK$6.58HK$65.80

*price indicative

Packaging Options:
RS Stock No.:
265-310
Mfr. Part No.:
RH6E040BGTB1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Package Type

HSMT-8

Series

R65

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

30.0nC

Maximum Power Dissipation Pd

78W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Power MOSFET features low on resistance and is housed in a compact, high power small mould package. It is well suited for a variety of applications, including switching, motor drives, and DC/DC converters, delivering efficient performance in space-constrained environments.

Pb free plating

RoHS compliant

High power small mould package

Low on resistance

100 percent Rg and UIS tested

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