ROHM RQ3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1

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Bulk discount available

Subtotal (1 tape of 10 units)*

HK$50.05

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  • 90 unit(s) ready to ship from another location
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Units
Per unit
Per Tape*
10 - 90HK$5.005HK$50.05
100 - 240HK$4.75HK$47.50
250 - 490HK$4.407HK$44.07
500 - 990HK$4.052HK$40.52
1000 +HK$3.909HK$39.09

*price indicative

Packaging Options:
RS Stock No.:
264-477
Mfr. Part No.:
RQ3L070BGTB1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

RQ3

Package Type

HSMT-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

24.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

15W

Typical Gate Charge Qg @ Vgs

7.6nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The ROHM power MOSFET 60V 20A offers low on-resistance, making it ideal for primary side switching, motor drives, and DC-DC converters.

Low on-resistance

Small Surface Mount Package

Pb-free plating and RoHS compliant

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