onsemi NTMFS N-Channel MOSFET, 111 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS2D3N04XMT1G
- RS Stock No.:
- 220-602
- Mfr. Part No.:
- NTMFS2D3N04XMT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
HK$86.90
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- Shipping from 11 October 2027
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | HK$8.69 | HK$86.90 |
| 100 - 240 | HK$8.27 | HK$82.70 |
| 250 - 490 | HK$8.11 | HK$81.10 |
| 500 - 990 | HK$7.94 | HK$79.40 |
| 1000 + | HK$7.78 | HK$77.80 |
*price indicative
- RS Stock No.:
- 220-602
- Mfr. Part No.:
- NTMFS2D3N04XMT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 820mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 22.1nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 820mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 22.1nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 175°C | ||
Width 6mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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