STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4

RS Stock No.:: 214-958
Mfr. Part No.:: SCT040W120G3-4
Manufacturer:: STMicroelectronics

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4

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RS Stock No.:: 214-958
Mfr. Part No.:: SCT040W120G3-4
Manufacturer:: STMicroelectronics

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCT
	Package Type	Hip-247-4
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1200V
	Maximum Power Dissipation Pd	312W
	Typical Gate Charge Qg @ Vgs	56nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-10 to 22 V
	Maximum Operating Temperature	200°C
	Standards/Approvals	RoHS, ECOPACK2
	Automotive Standard	AEC-Q101

	Select all
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 1200V
	Series SCT
	Package Type Hip-247-4
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1200V
	Maximum Power Dissipation Pd 312W
	Typical Gate Charge Qg @ Vgs 56nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -10 to 22 V
	Maximum Operating Temperature 200°C
	Standards/Approvals RoHS, ECOPACK2
	Automotive Standard AEC-Q101

Datasheet - SCT040W120G3-4

COO (Country of Origin):: CN

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4

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