STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-252 STD6N95K5

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Subtotal (1 tape of 5 units)*

HK$114.90

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Units
Per unit
Per Tape*
5 - 45HK$22.98HK$114.90
50 - 95HK$21.84HK$109.20
100 - 495HK$20.22HK$101.10
500 - 995HK$18.60HK$93.00
1000 +HK$17.92HK$89.60

*price indicative

Packaging Options:
RS Stock No.:
151-926
Mfr. Part No.:
STD6N95K5
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-252

Series

MDmesh K5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.25Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.6nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

2.4mm

Width

6.6 mm

Standards/Approvals

RoHS

Length

10.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

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