STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface

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Per unit
Per Pack*
5 - 620HK$18.82HK$94.10
625 - 1245HK$18.36HK$91.80
1250 +HK$18.06HK$90.30

*price indicative

Packaging Options:
RS Stock No.:
877-2879
Mfr. Part No.:
STGD5NB120SZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

5A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

75W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

690ns

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Length

6.2mm

Series

H

Standards/Approvals

JEDEC JESD97, ECOPACK

Height

2.2mm

Width

6.4 mm

Energy Rating

12.68mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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