- RS Stock No.:
- 795-9094
- Mfr. Part No.:
- STGF3NC120HD
- Manufacturer:
- STMicroelectronics
On back order for despatch 07/08/2024, delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$17.706
Units | Per unit | Per Pack* |
5 - 10 | HK$17.706 | HK$88.53 |
15 - 20 | HK$17.262 | HK$86.31 |
25 + | HK$16.996 | HK$84.98 |
*price indicative |
- RS Stock No.:
- 795-9094
- Mfr. Part No.:
- STGF3NC120HD
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 6 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 25 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 16.4mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |